FGL40N150 datasheet, igbt equivalent, Fairchild Semiconductor

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datasheet Download (Size : 440.52KB)

Features and benefits

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* High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home app.

Application

Features
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* High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input .

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features
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* High speed switching Low saturation voltage : VCE(sat).

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